HV37-10F 私域 截取视频2-15秒4.18MB
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High Frequency High Voltage Diode
YZPST-HV37-10F
8KV High Frequency High Voltage Diode 200mA
Characteristics
1. High junction temperature up to 130℃
2. Low forward voltage drop, and small current leakage
3. Avalanche breakdown protection
4.Max reverse recovery time to 70nS
5. Excellent properties against HV surge impact
6. Axial leading wires which are weldable
7. Epoxy package with anti-corrosion properties on surface
Application
• Rectification for microwave oven
• Industrial microwave power supplies
• HF X ray source
• Laser power supply
• Voltage multiplying circuits
• Rectification of power supplies for other electronic devices
1.Main Specification
No.
Item
Symbol
Unit
Rating
Conditions
1
Repetitive Peak Reverse Voltage
VRRM
KV
10
2
Average Forward Current
IF (AV)
mA
200
Tamb=60 oC
50HZ Sine-half Wave
Rectification Average Value
3
Forward Surge Current
IFSM
A
15
Tamb=25 oC
50HZ Sine-half Wave,One Shot
4
Reverse Surge Current
IRSM
μA
5
5
Maximum Junction Temperature
Tjmax
oC
130
6
Storage Temperature
Tstg
oC
-40~+130
2. Electric Specification
|
NO. |
Item |
Symbol |
Unit |
Rating |
Test conditions |
|
1 |
Forward Voltage Drop |
VFM |
V |
18max |
IFM=200mA |
|
2 |
Normal Temperature Reverse Current |
IRM1 |
μA |
5max |
VRM=8KV |
|
3 |
High Temperature Reverse Current |
IRM2 |
μA |
5max |
Tamb=100oC VRM=8KV |
|
4 |
Reverse Breakdown Voltage |
VZ |
KV |
8 |
IR=200mA |
|
5 |
Reverse Recovery Time |
trr |
nS |
70 |
IF=2mA, IRM=4mA 90% |
(Tamb=25 oC, unless otherwise specified)
3. Application
For high voltage rectification;
4. Derating of Forward Current
5.Dimensions (in mm))
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Main Product:
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Semiconductor Module,
Power Diode,
Silicon Transistor,
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