IGBT Module YZPT-450B120E53
3 year ago
YZPST-450B120E53
IGBT Module
Applications
Inverter for motor drive
mC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine
Fnaturns
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Absolute MaxMmum RatMn
Parameter
Symbol
CondMtMons
Value
UnMt
Collector-Emitter Voltage
VCES
VGE=0V, IC =1mm, Tvj=25℃
1200
V
Continuous Collector Current
IC
Tc=100℃
450
m
Peak Collector Current
ICRM
ICRM =2IC
900
m
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
V
Total Power Dissipation
(IGBT-inverter)
Ptot
Tc=25℃
Tvjmax=175℃
3000
W
IGBT CharacterMstMcs
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Parameter
Symbol
CondMtMons
Value
UnMt
Collector-Emitter Voltage
VCES
VGE=0V, IC =1mm, Tvj=25℃
1200
V
Continuous Collector Current
IC
Tc=100℃
450
m
Peak Collector Current
ICRM
ICRM =2IC
900
m
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
V
Total Power Dissipation
(IGBT-inverter)
Ptot
Tc=25℃
Tvjmax=175℃
3000
W
|
Parameter |
Symbol |
CondMtMons |
Value |
UnMt |
||
|
MMn. |
Typ. |
Max. |
|
|||
|
Gate-emitter Threshold Voltage |
VGE(th) |
VGE=VCE, IC =3mm,Tvj=25℃ |
5.0 |
6.2 |
7.0 |
V |
|
Collector-Emitter Cut-off Current |
ICES |
VCE=1200V,VGE=0V, Tvj=25℃ |
|
|
1.0 |
mm |
|
VCE=1200V,VGE=0V, Tvj=125℃ |
|
|
5.0 |
mm |
||
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
Ic=450m,VGE=15V, Tvj=25℃ |
|
1.85 |
|
V |
|
Ic=450m,VGE=15V, Tvj=125℃ |
|
2.05 |
|
V |
||
|
Input Capacitance |
Cies |
VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ |
|
31.8 |
|
nF |
|
Output Capacitance |
Coes |
|
2.13 |
|
nF |
|
|
Reverse Transfer Capacitance |
Cres |
|
1.48 |
|
nF |
|
|
Internal Gate Resistance |
Rgint |
|
|
0.7 |
|
Ω |
|
Turn-on Delay Time |
td(on) |
IC =450 m VCE = 600 V VGE = ±15V RG =3.3Ω Tvj=25℃ |
|
320 |
|
ns |
|
Rise Time |
tr |
|
165 |
|
ns |
|
|
Turn-off Delay Time |
td(off) |
|
650 |
|
ns |
|
|
Fall Time |
tf |
|
124 |
|
ns |
|
|
Energy Dissipation During Turn-on Time |
Eon |
|
35 |
|
mJ |
|
|
Energy Dissipation During Turn-off Time |
Eoff |
|
42 |
|
mJ |
|
|
Turn-on Delay Time |
td(on) |
IC =450m VCE = 600 V VGE = ±15V RG =3.3Ω Tvj=125℃ |
|
350 |
|
ns |
|
Rise Time |
tr |
|
193 |
|
ns |
|
|
Turn-off Delay Time |
td(off) |
|
720 |
|
ns |
|
|
Fall Time |
tf |
|
156 |
|
ns |
|
|
Energy Dissipation During Turn-on Time |
Eon |
|
55 |
|
mJ |
|
|
Energy Dissipation During Turn-off Time |
Eoff |
|
64 |
|
mJ |
|
|
SC Data |
Isc |
Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V, VCEM≤1200V |
|
2100 |
|
m |
Ÿ 
Package Dimensions
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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