YZPST-S65R650 TO-252

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

P/N:YZPST-S65R650

S65R650 MOSFET

DESRCRIPTION:

The S65R650 is a Superjunction MOSFET designed to have better characteristics, such as low on-state resistance,

Low gate charge, Ultra fast switching ，and High ruggedness. These devices are well suited for high efficiency switched mode power supplies.

ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter		Value	Unit
VDS	Drain-Source Voltage		650	V
VGS	Gate-Source Voltage		±30	V
ID	Continuous Drain Current	Tc=25℃	8	A
ID	Continuous Drain Current	Tc=100℃	6	A
IDM	Pulsed Drain Current		30	A
Ptot	Power Dissipation (TC=25°C)		93	W
Tj	Junction Temperature		150	℃
Tstg	Operation and Storage Temperature		-55 to +150	℃
EAS	Avalanche Energy		74	mJ

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS= 0V, ID= 250μA	650			V
IDSS	Drain-Source Leakage Current	VDS=650V ,VGS=0V			1	uA
IGSS	Gate-Source Leakage Current	VGS= ±30V			±100	nA
VGS(th)	Gate Threshold Voltage	VDS= VGS, ID= 250μA	2.5		4.5	V
RDS(ON)	Static Drain-Source On-State Resistance	VGS= 10V ，ID= 4A		503	650	mΩ

PACKAGE MECHANICAL DATA

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YANGZHOU POSITIONING TECH CO., LTD.

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