T4150 TO-218X
4 week ago
|
ABSOLUTE MAXIMUM RATINGS |
|||
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junctiontemperature range |
Tstg |
-40~ 150 |
℃ |
|
Operating junction temperature range |
Tj |
-40~ 125 |
℃ |
|
Repetitive peak off-state voltage (T =25℃) |
VDRM |
800/1200 |
V |
|
Repetitive peak reverse voltage (T =25℃) |
VRRM |
800/1200 |
V |
|
RMS on-state current(TC=80℃) |
IT(RMS) |
40 |
A |
|
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
400 |
A |
|
I2t value for fusing (tp= 10ms) |
I2t |
800 |
A2 S |
|
Critical rate of rise of on-state current(I =2×IGT) |
di/dt |
50 |
A/μS |
|
Peak gate current |
IGM |
8 |
A |
|
Peakgate power dissipation |
PGM |
40 |
W |
|
Average gate power dissipation |
PG(AV) |
1 |
W |
|
Thermal Resistances |
|||
|
Symbol |
Parameter |
Value |
Unit |
|
Rth(j-c) |
Junction to case |
0.85 |
℃/W |
|
Rth(j-a) |
Junction to ambient |
50 |
|
|
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) |
|||||
|
Symbol |
Test Condition |
Quadrant |
|
Value |
Unit |
|
IGT |
|
Ⅰ Ⅱ Ⅲ |
MAX. |
50 |
mA |
|
VGT |
Ⅰ Ⅱ Ⅲ |
MAX. |
1.3 |
V |
|
|
VGD |
VD=VDRMTj=125℃ |
Ⅰ Ⅱ Ⅲ |
MIN. |
0.2 |
V |
|
IL |
IG= 1.2IGT |
Ⅰ-Ⅲ |
MAX. |
100 |
mA |
|
Ⅱ |
160 |
||||
|
IH |
IT=500mA |
MAX. |
80 |
mA |
|
|
dV/dt |
VD=2/3VDRMGate Open Tj=125℃ |
MIN. |
1000 |
V/μs |
|
TO-218X Package Mechanical Data
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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