YZPST-RGN040C024

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

P/N:YZPST-RGN040C024 40V Super-GaN FET

40V, 160A， 4. 3mΩ, Super -GaN FET in FCQFN 3x4

Features

GaN-on-Silicon E-mode HEMT technology

Very low gate charge

Ultra-low on resistance

Very small footprint

Applications

High frequency DC-DC converter Point of Load

RF envelope tracking PC charger

Mobile power bank Motor driver

Pin information

Pin	Pin description	Pin function
1, 2, 24, 25	Gate	Driver Gate
3-7, 9, 11-20, 22	Source	Source
8, 10, 21, 23	Drain	Power Drain

Key performance parameters at TJ = 25 °C

Parameter	Value	Unit
VDS,max	40	V
RDS(on),max @ VGS = 5 V	4.3	mΩ
QG,typ @ VDS = 20V	6.2	nC
IDS,Pulse	160	A
QOSS@ VDS = 20V	14	nC

Maximum Ratings at TJ = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	MAX	UNIT
VDS	Drain-to-Source Voltage (Continuous)	40	V
ID	Continuous current	24	A
ID	Pulsed (25˚C, TPulse = 300 µs)	160	A
VGS	Gate-to-Source Voltage	6	V
VGS	Gate-to-Source Voltage	-4	V
Ptot	Power dissipation (Tc, bottom = 25°C)	43	W
TJ	Operating Temperature	-40 to 150	˚C
TSTG	Storage Temperature	-40 to 150	˚C

Package Outlines

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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