IGBT Module 600B120E53--FF600R12ME4--2MBI600VN-120
3 year ago
YZPST-600B120E53
IGBT Power Module
ApplicationsInverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Absolute Maximum Ratings
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
1200 |
V |
|
Continuous Collector Current |
IC |
Tc=100℃ |
600 |
A |
|
Peak Collector Current |
ICRM |
ICRM=2IC |
1200 |
A |
|
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
|
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
3750 |
W |
IGBT Characteristics
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
||
|
Min. |
Typ. |
Max. |
|
|||
|
Gate-emitter Threshold Voltage |
VGE(th) |
VGE=VCE, IC =3mA,Tvj=25℃ |
5.0 |
5.8 |
6.5 |
V |
|
Collector-Emitter Cut-off Current |
ICES |
VCE=1200V,VGE=0V, Tvj=25℃ |
|
|
1.0 |
mA |
|
VCE=1200V,VGE=0V, Tvj=125℃ |
|
|
5.0 |
mA |
||
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
Ic=600A,VGE=15V, Tvj=25℃ |
|
1.70 |
|
V |
|
Ic=600A,VGE=15V, Tvj=125℃ |
|
2.00 |
|
V |
||
|
Input Capacitance |
Cies |
VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ |
|
43.1 |
|
nF |
|
Output Capacitance |
Coes |
|
2.25 |
|
nF |
|
|
Reverse Transfer Capacitance |
Cres |
|
1.95 |
|
nF |
|
|
Internal Gate Resistance |
Rgint |
|
|
1.25 |
|
Ω |
|
Turn-on Delay Time |
td(on) |
IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω Tvj=25℃ |
|
250 |
|
ns |
|
Rise Time |
tr |
|
88 |
|
ns |
|
|
Turn-off Delay Time |
td(off) |
|
560 |
|
ns |
|
|
Fall Time |
tf |
|
131 |
|
ns |
|
|
Energy Dissipation During Turn-on Time |
Eon |
|
33.1 |
|
mJ |
|
|
Energy Dissipation During Turn-off Time |
Eoff |
|
57.8 |
|
mJ |
|
|
Turn-on Delay Time |
td(on) |
IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω Tvj=125℃ |
|
300 |
|
ns |
|
Rise Time |
tr |
|
102 |
|
ns |
|
|
Turn-off Delay Time |
td(off) |
|
650 |
|
ns |
|
|
Fall Time |
tf |
|
180 |
|
ns |
|
|
Energy Dissipation During Turn-on Time |
Eon |
|
50.2 |
|
mJ |
|
|
Energy Dissipation During Turn-off Time |
Eoff |
|
87.8 |
|
mJ |
|
|
SC Data |
Isc |
Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V, VCEM≤1200V |
|
2400 |
|
A |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
||
|
Min. |
Typ. |
Max. |
|
|||
|
Diode DC Forward Current |
IF |
Tc=100℃ |
|
600 |
|
A |
|
Diode Peak Forward Current |
IFRM |
IFRM=2IF |
|
1200 |
|
A |
|
Forward Voltage |
VF |
IF=600A,Tvj=25℃ |
|
1.65 |
|
V |
|
IF=600A,Tvj=125℃ |
|
1.75 |
|
V |
||
|
Recovered Charge |
Qrr |
IF =600 A VR=600V -diF/dt =6000A/us Tvj=25℃ |
|
60.3 |
|
uC |
|
Peak Reverse Recovery Current |
Irr |
|
415 |
|
A |
|
|
Reverse Recovery Time |
trr |
|
260 |
|
ns |
|
|
Reverse Recovery Energy |
Erec |
|
28.1 |
|
mJ |
|
|
Recovered Charge |
Qrr |
IF =600 A VR=600V -diF/dt =6000A/us Tvj=125℃ |
|
114 |
|
uC |
|
Peak Reverse Recovery Current |
Irr |
|
543 |
|
A |
|
|
Reverse Recovery Time |
trr |
|
380 |
|
ns |
|
|
Reverse Recovery Energy |
Erec |
|
51.8 |
|
mJ |
|
Package Dimensions
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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