High Voltage Diode YZPST-CL08-12T
3 year ago
High Voltage Diode of CL08-12
1. Main Specification
|
No. |
Item |
Symbol |
Unit |
Rating |
Conditions |
|
1 |
Repetitive Peak Reverse Voltage |
VRRM |
KV |
12 |
|
|
2 |
Average Forward Current |
IF (AV) |
mA |
350 |
Tamb=60 ℃ 50HZ Sine-half Wave Rectification Average Value |
|
3 |
Forward Surge Current |
IFSM |
A |
15 |
Tamb=25 ℃ 50HZ Sine-half Wave,One Shot |
|
4 |
Reverse Surge Current |
IRSM |
A |
0.2 |
Pulse width 1ms triangle wave single pulse |
|
5 |
Maximum Junction Temperature= |
Tjmax |
℃ |
130 |
|
|
6 |
Storage Temperature |
Tstg |
℃ |
-40~+130 |
|
2. Electric Specification
|
No. |
Item |
Symbol |
Unit |
Rating |
Test conditions |
|
1 |
Forward Voltage Drop |
VFM |
V |
18.5max |
IF(AV)=350mA |
|
2 |
Normal Temperature Reverse Current |
IRM1 |
A |
5max |
VRM=12KV |
|
3 |
High Temperature Reverse Current |
IRM2 |
A |
50max |
Tamb=100℃ VRM=12KV |
|
4 |
Reverse Breakdown Voltage |
VZ |
KV |
12~18 |
IR=100uA |
|
5 |
Reverse Recovery Time |
trr |
nS |
80 max |
IF=IR=100mA, 90% |
(Tamb=25 oC, unless otherwise specified)
3. Application
For high voltage rectification for Micro Wave oven;
Other electronic rectification fields
5. Dimensions (in mm)
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Main Product:
Semiconductor Triac,
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Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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