Transistor NPN S9013 TO92Fe

2 year ago

54 0 

YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

TO-92 Plastic-Encapsulate Transistors

YZPST-S9013 TRANSISTOR (NPN)
FEATURES
Complementary to S9012

Excellent hFE linearity

YZPST-S9013 TO92

ORDERING INFORMATION

PartNumber	Package	PackingMethod	PackQuantity
S9013	TO-92	Bulk	1000pcs/Bag
S9013-tA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

SymboI	Parameter	VaIue	Unit
VCB0	Collector-Base Voltage	40	V
VCE0	Collector-Emitter Voltage	25	V
VEB0	Emitter-Base Voltage	5	V
1C	Collector Current -Continuous	0.5	A
PD	Collector Power Dissipation	625	mW
R9 JA	Thermal Resist ance f rom Junction fo Ambient	200	℃ / W
TJ,Tstg	JperTti0ncunati0nTnCRt0rTgeSemperTtureOTnge	-55 ~＋150	℃

Ta=25 ℃ unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
CoIIector base	V(BR)CBO	IC= 100μA , IE=0	40			V
breakdown
voItage
CoIIector emitter	V(BR)CEO	IC= 1mA , IB=0	25			V
breakdown
voItage
Emitter base	V(BR)EBO	IE= 100μA , IC=0	5			V
breakdown
voItage
CoIIector cut off	ICBO	VCB= 40V , IE=0			0.1	uA
current
CoIIector cut off	ICEO	VCE=20V , IE=0			0.1	uA
current
Emitter	IEBO	VEB= 5V, IC=0			0.1	uA
cut off
current
	hFE(1)	VCE=1V, IC=50mA	64		400
DC
current
gain	hFE(2)	VCE=1V, IC= 500mA	40
CoIIector emitter	VCE(sat)	IC= 500mA, IB= 50mA			0.6	V
saturation
voItage
Base emitter	VBE(sat)	IC= 500mA, IB= 50mA			1.2	V
voItage

Transition	fT	VCE=6V,IC=20mA,f=30MHz	150			MHz
frequency

CLASS1F1CAT10N0FhFE(1)

Rank	D	E	F	G	H	I	J
Range	64-91	78- 112	96- 135	112- 166	144-202	190-300	300-400

Outline Dimensions

SymboI	Dimensions		Dimensions
	1n		1n
	MiIIimeters		1nches
	Min	Max	Min	Max
A	3.3	3.7	0.13	0.146
A1	1.1	1.4	0.043	0.055
b	0.38	0.55	0.015	0.022
c	0.36	0.51	0.014	0.02
D	4.3	4.7	0.169	0.185
D1	3.43		0.135
E	4.3	4.7	0.169	0.185
e	1.270 TYP		0.050 TYP
1	2.44	2.64	0.096	0.104
L	14.1	14.5	0.555	0.571
o		1.6		0.063
h	0	0.38	0	0.015

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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