SCR 25TTS12FP TO220F
2 year ago
DESRCRIPTION:
Due to separation diffusion process and mesa
technology and Glass passivation, these devices
have good performance at dv/dt and reliability.
These series of SCR are specifically designed
for domestic lighting, heating and motor speed
controllers.
MAIN FEATURES
|
Symbol |
Value |
Unit |
|
IT(RMS) |
25 |
A |
|
VDRM/VRRM |
1200 |
V |
|
IGT |
10-20 |
mA |
ABSOLUTE MAX I MUM RATINGS
|
Symbol |
PARAMETER |
Value |
Unit |
||
|
IT(RMS) |
RMS on-state current(all conduction angles) |
TO-220AB |
Tc=90℃ |
25 |
A |
|
ITSM |
Non repetitive surge peak on-state current (half sine cycle, Tj=25℃) |
F=50HZ tp=10ms |
250 |
A |
|
|
I2t |
I2t Value for fusing |
tp=10ms |
312 |
A2 S |
|
|
di/dt |
Repetitive rate of rise of on-state Current after triggering |
F=120HZ,Tj=125℃ |
100 |
A/μs |
|
|
VDRM VRRM |
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage |
Tj=25℃ |
1200 |
V |
|
|
IGM |
Peak gate current, tp=20us, |
Tj=125℃ |
4 |
A |
|
|
PG(AV) |
Average gate power dissipation |
Tj=125℃ |
1 |
W |
|
|
Tstg |
Storage junction temperature range |
-40 to +150 |
℃ |
||
|
Tj |
Operating junction temperature range |
-40 to +125 |
℃ |
||
ELECTRICAL CHARACTERISTICS
|
Symbol |
Test Condition |
Quadrant |
Value |
Unit |
|
|
IGT |
VAK=12V, R=50Ω, T=25°C |
Ⅰ |
MAX |
25 |
mA |
|
VGT |
VAK=12V, R=50Ω, T=25°C |
Ⅰ |
MAX |
1.2 |
V |
|
VGD |
VD=VDRM RL=3.5KΩ Tj=125℃ |
MIN |
0.2 |
V |
|
|
IH |
IT=100mA, IG=50mA |
MAX |
50 |
mA |
|
|
IL |
IG=1.2IGT |
Ⅰ |
MAX |
80 |
mA |
|
dv/dt |
VD=67% VDRM gate open(Tj=125℃) |
MIN |
1000 |
V/μs |
|
STATIC CHARACTERISTICS
|
Symbol |
Parameter |
Value |
Unit |
|
|
VTM |
IT=50A, IG=50mA, T=25°C |
MAX |
1.50 |
V |
|
IDRM/IRRM |
VD=VDRM VR=VRRM, Tj=25℃ |
MAX |
5 |
μA |
|
H.T.IDRM/IRRM |
VD=VDRM VR=VRRM, Tj=125℃ |
MAX |
1 |
mA |
|
Rth(j-c) |
Junction to case(DC), TO-220A |
MAX |
0.9 |
℃/W |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
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