IGBT Module G100HF65D1
2 year ago
650V 100A IGBT Module YZPST-G100HF65D1
Features：
650V100A,VCE(sat)(typ.)=1.80V
Low inductive design
Lower losses and higher energy
Field Stop IGBT Technology
Excellent short circuit ruggedness
General Applications：
Auxiliary lnverter
Inductive Heating and Welding
Solar Applications
UPS Systems
Absolute Maximum Ratings of IGBT
| VCES | Collector to Emitter Voltage | 650 | V | |
| VGES | Continuous Gate to Emitter Voltage | ±30 | V | |
| TC = 25°C | 200 | |||
| IC | Continuous Collector Current | TC = 100°C | 100 | A |
| ICM | Pulse Collector Current | TJ = 150°C | 200 | A |
| PD | Maximum Power Dissipation (IGBT) | TC = 25°C, | 390 | W |
| TJ = 150°C | ||||
| tsc | Short Circuit Withstand Time | > 10 | µs | |
| TJ | Maximum IGBT Junction Temperature | 150 | °C | |
| TJOP | Maximum Operating Junction Temperature Range | -40 to +150 | °C | |
| Tstg | Storage Temperature Range | -40 to +125 | °C | |
Absolute Maximum Ratings of Freewheeling Diode
| VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 650 | V | |
| Diode Continuous Forward Current | TC = 25°C | 200 | ||
| IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
| IFM | Diode Maximum Forward Current | 200 | A | |
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
| Parameter | Test Conditions | Min | Typ | Max | Unit | ||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 650 | V | |||
| ICES | Collector to Emitter | VGE = 0V,VCE = VCES | 1 | mA | |||
| Leakage Current | |||||||
| IGES | Gate to Emitter Leakage Current | VGE = ±30V, VCE = 0V | 200 | nA | |||
| VGE(th) | Gate Threshold Voltage | IC = 1mA, VCE = VGE | 4.5 | 5.5 | V | ||
| TJ = 25°C | 1.8 | 2 | |||||
| VCE(sat) | Collector to Emitter Saturation Voltage (Module Level) | IC = 100A, VGE = 15V | TJ = 125°C | 2 | V | ||
Switching Characteristics of IGBT
| td(on) | Turn-on Delay Time | TJ = 25°C | 60 | ns | |||
| tr | Turn-on Rise Time | TJ = 25°C | 55 | ns | |||
| td(off) | Turn-off Delay Time | VCC = 400V | TJ = 25°C | 210 | ns | ||
| tf | Turn-off Fall Time | IC = 100A | TJ = 25°C | 65 | ns | ||
| Eon | Turn-on Switching Loss | RG = 10Ω | TJ = 25°C | 1.2 | mJ | ||
| Eoff | Turn-off Switching Loss | VGE = ±15V | TJ = 25°C | 1 | mJ | ||
| Qg | Total Gate Charge | Inductive Load | TJ = 25°C | 500 | nC | ||
| Rgint | Integrated gate resistor | f = 1M; | TJ = 25°C | 6.9 | Ω | ||
| Vpp = 1V | |||||||
| Cies | Input Capacitance | TJ = 25°C | 3.9 | ||||
| VCE = 25V | |||||||
| Coes | Output Capacitance | VGE = 0V | TJ = 25°C | 0.35 | nF | ||
| Cres | Reverse Transfer | f = 1MHz | TJ = 25°C | 0.25 | |||
| Capacitance | |||||||
| RθJC | Thermal Resistance, Junction-to-Case (IGBT) | 0.32 | °C/W | ||||
Electrical and Switching Characteristics of Freewheeling Diode
| VF | TJ = 25°C | 1.35 | |||||
| Diode Forward Voltage | IF = 100A , | V | |||||
| VGE = 0V | TJ = 125°C | 1.2 | |||||
| trr | Diode Reverse Recovery Time | IF = 100A, | TJ = 25°C | 80 | ns | ||
| Irr | Diode Peak Reverse Recovery Current | di/dt = 550A/µs, Vrr = 400V, | TJ = 25°C | 30 | A | ||
| Qrr | Diode Reverse Recovery Charge | TJ = 25°C | 6.2 | uC | |||
| RθJC | Thermal Resistance, Junction-to-Case (Diode) | 0.75 | °C/W | ||||
Module Characteristics
|
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
|
Viso |
Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute |
2500 |
|
|
V |
|
RθCS |
Case-To-Sink(Conductive Grease Applied) |
|
0.1 |
|
°C/W |
|
M |
Power Terminals Screw: M5 |
3.0 |
|
5.0 |
N·m |
|
M |
Mounting Screw: M6 |
4.0 |
|
6.0 |
N·m |
|
G |
Weight |
|
160 |
|
g |
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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