SCR S2535-12C 12-25mA TO-220C

Symbol

Value

Unit

IT(RMS)

40

A

VDRM VRRM

1200

V

IGT

35

mA

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (T =25℃)

VDRM

1200

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1200

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current (T =100℃)

IT(RMS)

40

A

Non repetitive surge peak on-state current

ITSM

350

A

Average on-state current (180° conduction angle)

IT(AV)

25

A

I2t value for fusing (tp=10ms)

I2t

450

A2S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤  100 ns)

dI/dt

150

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Symbol

Test Condition

Value

Unit

IGT

V =12V R =140Ω

MAX.

35

mA

VGT

MAX.

1.3

V

VGD

VD=VDRM Tj=125℃ R=1KΩ

MIN.

0.2

V

IL

IG=1.2IGT

MAX.

75

mA

IH

IT=50mA

MAX.

50

mA

dV/dt

VD=2/3VDRM Gate Open  Tj=125℃

MIN.

500

V/μs