TRIAC BTA16 800B TO220

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

YZPST-BTB16-800B 800V BTB16-800B 16A Triac

BTA16/BTB16 (BT139) Series16ATriacs

DESCRIPTION:

With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTB16-600B-1

MAIN FEATURES:

symbol	value	unit
IT(RMS)	16	A
VDRM/VRRM	600/800/ 1200	V
VTM	≤ 1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25C)	VDRM	600/800/ 1200	V
Repetitive peak reverse voltage (Tj=25C)	VRRM	600/800/ 1200	V
RMS on-state current	IT(RMS)	16	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	160	A
I2t value for fusing (tp=10ms)	I2t	128	A2s
Critical rate of rise of on-state current(IG=2× IGT)	dI/dt	50	A/μs
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	5	W

ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)

3 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		TW	SW	CW	BW	Unit
IGT	VD=12V,			5	10	35	50	A
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.3				V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ	MIN	0 2				V
IH	IT=100mA		MAX	15	25	40	60	A
		Ⅰ-Ⅲ		20	30	50	70	m
IL	IG=1.2IGT	Ⅱ	MAX	25	40	60	90	A
	VD=2/3VDRM Tj=125C Gate open
dV/dt	VD=2/3VDRM Tj=125C Gate open		MIN	100	200	500	1000	V/µs

4 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		C	B	Unit
		Ⅰ- Ⅱ-Ⅲ		25	50	A
IGT	VD=12V,	Ⅳ		50	70	A
VGT	RL=33Ω	ALL	MAX	1.5		V
VGD	VD=VDRM	ALL	MIN	0.2		V
IH	IT=100mA		MAX	40	60	A
		Ⅰ-Ⅲ- Ⅳ		50	70	m
IL	IG=1.2IGT	Ⅱ	MAX	70	90	A
	VD=2/3VDRM Tj=125C Gate open
dV/dt	VD=2/3VDRM Tj=125C Gate open		MIN	200	500	V/µs

STATIC CHARACTERISTICS

Symbol	Test Condition			Value	Unit
VTM	ITM=22.5A tp=380μs	Tj=25C	MAX	1.5	V
IDRM		Tj=25C		5	A
IRRM	VDRM= VRRM	Tj=125C	MAX	1	A

THERMAL RESISTANCES

Symbol	Test Condition		Value	Unit
Rth(j-c)		TO-220A(Ins)	2.1	℃/W
		TO-220B(Non-Ins)	1.3
		TO-220F(Ins)	2.3
	junction to case(AC)	TO-263	2.4

ORDERING INFORMATION

PACKAGE MECHANICAL DATA

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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