SCR BT145-800R TO220
2 year ago
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance.
Features and benefits
AC power control
High bidirectional blocking voltage capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
High junction operating temperature capability (Tj(max) = 150 °C)
Package meets UL94V0 flammability requirement
Package is RoHS compliant
IEC 61000-4-4 fast transien
Applications
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
High junction operating temperature capability (Tj(max) = 150 °C)
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Absolute maximum rating
VRRM
repetitive peak reverse voltage
-
-
800
V
IT(RMS)
RMS on-state current
half sine wave; Tmb ≤ 128 °C;
-
-
25
A
Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- state current
half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5
-
-
300
A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
-
-
330
A
Tj
junction temperature
-
-
150
°C
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
1.5
-
15
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
-
60
mA
VT
on-state voltage
IT = 30 A; Tj = 25 °C; Fig. 10
-
1.1
1.5
V
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
80
-
-
V/μs
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
| Symbol | Parameter | Conditions | Min | Max | Unit | |
| VDRM | repetitive peak off-state voltage | - | 800 | V | ||
| VRRM | repetitive peak reverse voltage | - | 800 | V | ||
| IT(AV) | average on-state current | half sine wave; Tmb ≤ 128°C; | - | 16 | A | |
| IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 128°C; Fig. 1; Fig. 2; Fig. 3 | - | 25 | A |
| ITSM | non-repetitive peak on- state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 | - | 300 | A | |
| half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | - | 330 | A | |||
| I2t | I2t for fusing | tp = 10 ms; SIN | - | 450 | A2s | |
| d IT/dt | rate of rise of on-state current | IG = 20 mA | - | 200 | A/μs | |
| IGM | peak gate current | - | 5 | A | ||
| VRGM | peak reverse gate | - | 5 | V | ||
| voltage | ||||||
| PGM | peak gate power | - | 20 | W | ||
| PG(AV) | average gate power | over any 20 ms period | - | 0.5 | W | |
| Tstg | storage temperature | -40 | 150 | °C | ||
| Tj | junction temperature | - | 150 | °C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
| Rth(j-mb) | thermal resistance | Fig. 6 | - | - | 1 | K/W | |
| from junction to | |||||||
| mounting base | |||||||
| Rth(j-a) | thermal resistance | in free air | - | 60 | - | K/W | |
| from junction to | |||||||
| ambient free air |
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