TRIAC BT136-600D TO220
2 year ago
P/N: YZPST-BT136 Series 4A Triacs
YZPST-BT136-600D
With low holding and latching current, BT136 Series triacs are especially recommended for use on middle and small resistance type power load.
MAIN FEATURES:
|
symbol |
value |
unit |
|
IT(RMS) |
4 |
A |
|
VDRM/VRRM |
600/800 |
V |
|
VTM |
≤1.7 |
V |
ABSOLUTE MAXIMUM RATINGS:
| Parameter | Symbol | Value | Unit | |
| Storage junction temperature range | Tstg | -40~150 | ℃ | |
| Operating junction temperature range | Tj | -40~125 | ℃ | |
| Repetitive peak off-state voltage (Tj=25℃) | VDRM | 600/800 | V | |
| Repetitive peak reverse voltage (Tj=25℃) | VRRM | 600/800 | V | |
| RMS on-state current | IT(RMS) | 4 | A | |
| Non repetitive surge peak on-state current | ||||
| (full cycle, F=50Hz) | ITSM | 25 | A | |
| I2t value for fusing (tp=10ms) | I2t | 3.1 | A2s | |
| Critical rate of rise of on-state current (IG=2 × IGT) | Ⅰ- Ⅱ-Ⅲ | 50 | ||
| dI/dt | Ⅳ | 10 | A/ μs | |
| Peak gate current | IGM | 2 | A |
| Average gate power dissipation | PG(AV) | 0.5 | W |
| Peak gate power | PGM | 5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
| Parameter | Value | ||||||
| Test Condition | Quadrant | T | D | E | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 5 | 5 | 10 | ||||
| IGT | VD=12V, | Ⅳ | 5 | 10 | 25 | mA | |
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MAX | 1.3 | V | ||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | ||
| IH | IT=100mA | MAX | 5 | 10 | 20 | mA | |
| Ⅰ-Ⅲ-Ⅳ | 8 | 10 | 20 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 12 | 15 | 35 | mA |
| VD=0.66×VDRM Tj=125℃ Gate open | |||||||
| dV/dt | MIN | 10 | 20 | 50 | V/ µs | ||
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=5A tp=380μs | Tj=25℃ | MAX | 1.7 | V |
| IDRM | Tj=25℃ | 5 | µA | ||
| IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 0.5 | mA |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| TO-252-4R | 2.8 | |||
| Rth(j-c) | junction to case(AC) | TO-220B(Non-Ins)/ TO-220C | 2.6 | ℃/W |
PACKAGE MECHANICAL DATA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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