NPN high power bipolar transistor MJD31C TO-252

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Continuous Collector Current

3

A

ICM

Collector current-Pulse

5

A

IB

Base Current

1

A

PTOT

Total dissipation at Tcase=25 ℃

15

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55〜 150

℃

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICEO

Collector Cutoff Current

VCE= 60 V

0.3

mA

IEBO

Emitter Cutoff Current

VEB= 5 V

1

mA

VCEO（SUS）

Collector-Emitter Sustaining Voltage

IC= 30mA

100

V

VCEsat

Collector-Emitter Saturation Voltage

IC=3A IB=0.375A

1.2

V

VBE

Base-Emitter On Voltage

IC=3A ; VCE=4V

1.8

V

hFE- 1

DC current gain

IC= 1A ; VCE=4V

25

hFE-2

DC current gain

IC=3A ; VCE=4V

10

50

fT

Transiton frequency

IC=0.5A ; VCE= 10V

3

MHz