IGBT Module GD600HFX170C6S
2 year ago
1700V/600A 2 in one-package
General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology
Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current TC=25oC TC= 100oC |
1069 600 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
|
PD |
|
4166 |
W |
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
|
IF |
Diode Continuous Forward Current |
600 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Characteristics TC=25oC unless otherwise noted
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| IC=600A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
| VCE(sat) | Collector to Emitter | IC=600A,VGE=15V, Tj=125oC | 2.25 | V | ||
| Saturation Voltage | IC=600A,VGE=15V, Tj=150oC | 2.35 | ||||
| VGE(th) | Gate-Emitter Threshold Voltage | IC= 12.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
| ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
| Current | Tj=25oC | |||||
| IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
| RGint | Internal Gate Resistance | 1.3 | Ω | |||
| Cies | Input Capacitance | VCE=25V,f=1MHz, | 72.3 | nF | ||
| Cres | Reverse Transfer | VGE=0V | 1.75 | nF | ||
| Capacitance | ||||||
| QG | Gate Charge | VGE=- 15…+15V | 5.66 | μC | ||
| td(on) | Turn-On Delay Time | 170 | ns | |||
| tr | Rise Time | 67 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC | 527 | ns | ||
| tf | Fall Time | 138 | ns | |||
| Eon | Turn-On Switching | 154 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 132 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 168 | ns | |||
| tr | Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC | 619 | ns | ||
| tf | Fall Time | 196 | ns | |||
| Eon | Turn-On Switching | 236 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 198 | mJ | |||
| Loss | ||||||
| td(on) | Turn-On Delay Time | 192 | ns | |||
| tr | Rise Time | 80 | ns | |||
| td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC | 640 | ns | ||
| tf | Fall Time | 216 | ns | |||
| Eon | Turn-On Switching | 259 | mJ | |||
| Loss | ||||||
| Eoff | Turn-Off Switching | 215 | mJ | |||
| Loss | ||||||
| tP≤10μs,VGE=15V, | ||||||
| ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 2400 | A |
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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