MOSFET FQP3P50 TO220
2 year ago
motor control, and variable switching power applications.
ABSOLUTE MAX I MUM RATINGS
| Symbol | Parameter | Value | Unit | |
| VDSS | Drain-Source Voltage | -500 | V | |
| VGSS | Gate-Source Voltage | ±30 | V | |
| Tc=25℃ | -2.7 | A | ||
| ID | Continuous Drain Current | Tc= 100℃ | -1.71 | A |
| IDM | Pulsed Drain Current | -10.8 | A | |
| Ptot | Power Dissipation (TC=25°C) | To-220C | 85 | W |
| Tj | Junction Temperature | 150 | ℃ | |
| Tstg | Operation and Storage Temperature | -205 | ℃ | |
| EAS | Avalanche Energy | 250 | mJ | |
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
| Symbol | Parameter | Test Condition | Value | Unit | ||
| Min | Type | Max | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS= 0V, ID=- 250μA | -500 | V | ||
| VDS=-500V ,VGS=0V | -1 | uA | ||||
| IDSS | Drain-Source Leakage Current | VDS=-400V,VGS=0V ， | -100 | uA | ||
| Tc=125℃ | ||||||
| IGSS | Gate-Source Leakage Current | VGS= ±30V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS,ID= - 250uA | -3 | -5 | V | |
| RDS(ON) | Static Drain-Source On-State Resistance | VGS= -10V ，ID= -1A | 5 | Ω | ||
| ∆BVDSS / ∆TJ | Breakdown Voltage Temperature Coefficient | ID = -250 µA, | 0.42 | V/℃ | ||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
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