SiC MOSFET M1A080120L1 TO247-4
2 year ago
Pulsed Power applications
Part Number
Package
M1A080120 L1
TO-247-4
Maximum Ratings (TC=25℃ unless otherwise specified)
Electrical Characteristics (TC=25℃ unless otherwise specified)
Reverse Diode Characteristics
Package Dimensions
Package TO-247-4
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax
Drain-Source Voltage
1200
V
VGS=0V, ID=100μA
VGSmax
Gate-Source Voltage
-0.4
V
Absolute maximum values
VGSop
Gate-Source Voltage
-0.25
V
Recommended operational values
ID
Continuous Drain Current
36
A
VGS=20V, Tc=25℃
24
VGS=20V, Tc=100℃
ID(pulse)
Pulsed Drain Current
80
A
Pulse width tp limited by TJmax
PD
Power Dissipation
192
W
Tc=25℃, TJ=150℃
TJ, TSTG
Operating Junction and Storage Temperature
-55 to +150
℃
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
1200
/
/
V
VGS=0V, ID=100μA
VGS(th)
Gate Threshold Voltage
2
2.4
4
V
VDS=VGS, ID=5mA
Fig. 11
/
1.8
/
VDS=VGS, ID=5mA, TJ=150℃
IDSS
Zero Gate Voltage Drain Current
/
1
100
µA
VDS=1200V, VGS=0V
IGSS+
Gate-Source Leakage Current
/
10
250
nA
VDS=0V, VGS=25V
IGSS-
Gate-Source Leakage Current
/
10
250
nA
VDS=0V, VGS=-10V
RDS(on)
Drain-Source On-State Resistance
/
80
98
mΩ
VGS=20V, ID=20A
Fig.
/
140
/
VGS=20V, ID=20A, TJ=150℃
4,5,6
Ciss
Input Capacitance
/
1475
/
VGS=0V
Fig.
Coss
Output Capacitance
/
94
/
pF
VDS=1000V
15,16
Crss
Reverse Transfer Capacitance
/
11
/
f=1MHz
Eoss
Coss Stored Energy
/
52
/
µJ
VAC=25mV
EON
Turn-On Switching Energy
/
564
/
µJ
VDS=800V, VGS=-5V/20V
EOFF
Turn-Off Switching Energy
/
260
/
ID=20A, RG(ext)=2.5Ω, L=200μH
td(on)
Turn-On Delay Time
/
9.3
/
tr
Rise Time
/
9.5
/
VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω
td(off)
Turn-Off Delay Time
/
18
/
ns
tf
Fall Time
/
7.6
/
RG(int)
Internal Gate Resistance
/
3.1
/
Ω
f=1MHz, VAC=25mV
QGS
Gate to Source Charge
/
24
/
VDS=800V
QGD
Gate to Drain Charge
/
15
/
nC
VGS=-5V/20V
QG
Total Gate Charge
/
79
/
ID=20A
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VSD
Diode Forward Voltage
3.6
/
V
VGS=-5V, ISD=10A
Fig. 8,9,10
3.3
/
VGS=-5V, ISD=10A, TJ=150℃
IS
Continuous Diode Forward Current
/
44
A
TC=25℃
trr
Reverse Recover Time
35
/
ns
Qrr
Reverse Recovery Charge
91
/
nC
VR=800V, ISD=20A
Irrm
Peak Reverse Recovery Current
4.5
/
A
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Main Product:
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