TRIAC Z0103MA 1-3MA TO92CU
12 month ago
Standard 1A Triacs P/N:YZPST-Z0103MN0
Table 1. Absolute maximum ratings
| Symbol | Parameter | Value | Unit | ||
| On-state rms current | SOT-223 | T tab = 90 °C | |||
| IT(RMS) | (full sine wave) | TO-92 | TL = 50 °C | 1 | A |
| SMBflat-3L | T tab = 107 °C | ||||
| ITSM | Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) | F = 50 Hz | t = 20 ms | 8 | A |
| F = 60 Hz | t = 16.7 ms | 8.5 | |||
| I²t | I²t Value for fusing | tp = 10 ms | 0.35 | ² | |
| A s | |||||
| dI/dt | Critical rate of rise of on-state current IG = 2 x I GT , tr ≤ 100 ns | F = 120 Hz | Tj = 125 °C | 20 | A/µs |
| IGM | Peak gate current | tp = 20 µs | Tj = 125 °C | 1 | A |
| PG(AV) | Average gate power dissipation | Tj = 125 °C | 1 | W | |
| Tstg | Storage junction temperature range | - 40 to + 150 | °C | ||
| Tj | Operating junction temperature range | - 40 to + 125 | |||
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
| Symbol | Z01 | |||||||
| Test conditions | Quadrant | 3 | 7 | 9 | 10 | Unit | ||
| I GT (1) | VD = 12 V, | I - II - III | MAX. | 3 | 5 | 10 | 25 | mA |
| RL = 30 Ω | IV | 5 | 7 | 10 | 25 | |||
| VGT | ALL | MAX. | 1.3 | V | ||||
| VD = VDRM, | ||||||||
| VGD | RL = 3.3 kΩ, | ALL | MIN. | 0.2 | V | |||
| Tj = 125 °C | ||||||||
| IH (2) | IT = 50 mA | MAX. | 7 | 10 | 10 | 25 | mA | |
| IL | IG = 1.2 I GT | I - III - IV | MAX. | 7 | 10 | 15 | 25 | mA |
| II | 15 | 20 | 25 | 50 | ||||
| dV/dt (2) | VD = 67% V DRM gate open Tj = 110 °C | MIN. | 10 | 20 | 50 | 100 | V/µs | |
| (dV/dt)c | (dI/dt)c = 0.44 A/ms, | MIN. | 0.5 | 1 | 2 | 5 | V/µs | |
| -2 | Tj = 110 °C | |||||||
1. Minimum I GT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
Table 3. Static characteristics
| Symbol | Test conditions | Value | Unit | ||
| VTM(1) | ITM = 1.4 A, tp = 380 µs | Tj = 25 °C | MAX. | 1.6 | V |
| V to (1) | Threshold voltage | Tj = 125 °C | MAX. | 0.95 | V |
| Rd (1) | Dynamic resistance | Tj = 125 °C | MAX. | 400 | mΩ |
| I DRM | V DRM = VRRM | Tj = 25 °C | MAX. | 5 | µA |
| IRRM | Tj = 125 °C | 0.5 | mA | ||
1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistances
| Symbol | Parameter | Value | Unit | |||
| Rth(j-t) | Junction to tab (AC) | SOT-223 | 25 | |||
| Rth(j-t) | Junction to tab (AC) | SMBflat-3L | 14 | |||
| Rth(j-I) | Junction to lead (AC) | TO-92 | 60 | |||
| S(1) = 5 cm² | SOT-223 | MAX. | 60 | °C/W | ||
| Rth(j-a) | Junction to ambient | SMBflat-3L | 75 | |||
| TO-92 | 150 | |||||
1. S = copper surface under tab.
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Silicon Transistor ,
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