SCR 2P4M 10-30UA TO126CU
12 month ago
2P4M 2A Sensitive SCRs
MAIN FEATURES:
|
symbol |
value |
unit |
|
IT(RMS) |
2.0 |
A |
|
IGT |
≤200 |
μA |
|
VDRM/VRRM |
600 |
V |
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Storage junction temperature range
Tstg
-40~150
℃
Operating junction temperature range
Tj
-40~110
℃
Repetitive peak off-state voltage (Tj=25℃)
VDRM
600
V
Repetitive peak reverse voltage (Tj=25℃)
VRRM
600
V
RMS on-state current
IT(RMS)
2
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
ITSM
20
A
I2t value for fusing (tp=10ms)
I2t
2
A2s
Critical rate of rise of on-state current (IG=2 × IGT)
dI/dt
50
A/ μs
Peak gate current
IGM
0.2
A
Average gate power dissipation
PG(AV)
0.1
W
Peak gate power
PGM
0.5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
| Symbol | Value | ||||
| Test Condition | MIN | TYPE | MAX | Unit | |
| IGT | VD=12V, RL=33Ω | - | 50 | 200 | μA |
| VGT | - | 0.6 | 0.8 | V | |
| VGD | VD=VDRM Tj=110℃ | 0.2 | - | - | V |
| IH | IT=50mA | - | - | 5 | mA |
| IL | IG=1.2IGT | - | - | 6 | mA |
| dV/dt | VD=2/3×VDRM Tj=110℃ RGK=1KΩ | 20 | - | - | V/ µs |
STATIC CHARACTERISTICS
PACKAGE MECHANICAL DATA
Symbol
Test Condition
Value
Unit
VTM
ITM=4A tp=380μs
Tj=25℃
MAX
1.5
V
IDRM
VD=VDRM= VRRM RGK=1KΩ
Tj=25℃
MAX
5
µA
IRRM
Tj=110℃
0.1
mA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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