TRIAC BT131 1-3MA＞600V TO92CU

12 month ago

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7 year

Product details

BT131 Series 1A Triacs SOT-223

DESCRIPTION:

With low holding and latching current, BT131 Series triacs are especially recommended for use on middle and small resistance type power load.

YZPST-BT131-1
MAIN FEATURES:

symbol	value	unit
IT(RMS)	1	A
VDRM/VRRM	600/800	V
V_TM	≤1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter		Symbol	Value	Unit
Storage junction temperature range		T_stg	-40~150	℃
Operating junction temperature range		T_j	-40~125	℃
Repetitive peak off-state voltage (T_j=25℃)		V_DRM	600/800	V
Repetitive peak reverse voltage (T_j=25℃)		V_RRM	600/800	V
RMS on-state current		IT(RMS)	1	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)		I_TSM	16	A
I²t value for fusing (t_p=10ms)		I2t	1.28	A2s
Critical rate of rise of on-state current (I_G=2×I_GT)	dI/dt	Ⅰ-Ⅱ-Ⅲ	50	A/μs
Critical rate of rise of on-state current (I_G=2×I_GT)	dI/dt	Ⅳ	10	A/μs
Peak gate current		I_GM	2	A
Average gate power dissipation		PG(AV)	0.5	W
Peak gate power		P_GM	5	W

ELECTRICAL CHARACTERISTICS (T_j=25℃ unless otherwise specified)

Parameter	Test Condition	Quadrant		Value		Unit
				T	D
I_GT	V_D=12V, R_L=33Ω	Ⅰ-Ⅱ-Ⅲ	MAX	3	5	mA
		Ⅳ		5	10
V_GT		Ⅰ-Ⅱ-Ⅲ-Ⅳ		1.3		V
V_GD	VD=VDRM	Ⅰ-Ⅱ-Ⅲ-Ⅳ	MIN	0.2		V
I_H	I_T=100mA		MAX	5	7	mA
I_L	I_G=1.2I_GT	Ⅰ-Ⅲ-Ⅳ	MAX	5	5	mA
		Ⅱ		10	20
dV/dt	V_D=0.66×V_DRM T_j=125℃ Gate open		MIN	20	50	V/µs

STATIC CHARACTERISTICS

Symbol	Test Condition			Value	Unit
V_TM	I_TM=1.4A t_p=380μs	T_j=25℃	MAX	1.5	V
I_DRM I_RRM	VDRM= VRRM	T_j=25℃	MAX	5	µA
I_DRM I_RRM	VDRM= VRRM	T_j=125℃	MAX	0.5	mA

THERMAL RESISTANCES

Symbol

Test Condition

Value

Unit

Rth(j-c)

junction to case(AC)

TO-92

℃/W

SOT-89/SOT-223 SOT-223-2L

℃/W

PACKAGE MECHANICAL DATA

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode , Silicon Transistor, Bridge Rectifier

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