IGBT Module G900WB120B6TC
2 year ago
1200V 900A IGBT Module
P/N: YZPST-G900WB120B6TC
PRODUCT FEATURES
IGBT CHIP(Trench+FS)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONSAC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-ABSOLUTE MAXIMUM RATINGS(TC =25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VCES | Collector Emitter Voltage | TJ=25℃ | 1200 | V |
| VGES | Gate Emitter Voltage | ±20 | ||
| IC | DC Collector Current | TC=25℃, TJmax =175℃ | 880 | |
| TC=95℃, TJmax =175℃ | 900 | A | ||
| ICM | Repetitive Peak Collector Current | tp=1ms | 1200 | |
| Ptot | Power Dissipation Per IGBT | TC=25℃, TJmax =175℃ | 3125 | W |
Diode-ABSOLUTE MAXIMUM RATINGS ( TC =25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VRRM | Repetitive Reverse Voltage | TJ=25℃ | 1200 | V |
| IF(AV) | Average Forward Current | 900 | A | |
| IFRM | Repetitive Peak Forward Current | tp=1ms | 1200 | |
| I2t | TJ =150℃, t=10ms, VR=0V | 45 | kA2s | |
IGBT-inverter
ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE , IC=24mA
5
5.8
6.5
Collector Emitter
IC=900A, VGE=15V, TJ=25℃
1.9
2.3
VCE(sat)
Saturation Voltage
IC=900A, VGE=15V, TJ=125℃
2.2
V
IC=900A, VGE=15V, TJ=150℃
2.25
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25℃
1
mA
VCE=1200V, VGE=0V, TJ=150℃
10
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25℃
-400
400
nA
RGint
Integrated Gate Resistor
0.7
Ω
Qg
Gate Charge
VCE=900V, IC=900A , VGE=15V
3.1
µC
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
43.2
nF
Cres
Reverse Transfer Capacitance
2.07
nF
td(on)
Turn on Delay Time
VCC=600V,IC=900A RG =1.5Ω ,
TJ=25℃
100
ns
VGE=±15V,
TJ=150℃
110
ns
tr
Rise Time
Inductive Load
TJ=25℃
85
ns
TJ=150℃
95
ns
td(off)
Turn off Delay Time
VCC=600V,IC=900A RG =1.5Ω ,
TJ=25℃
530
ns
VGE=±15V,
TJ=150℃
580
ns
tf
Fall Time
Inductive Load
TJ=25℃
65
ns
TJ=150℃
215
ns
TJ=25℃
55
mJ
Eon
Turn on Energy
TJ=125℃
85
mJ
VCC=600V,IC=900A RG =1.5Ω ,
TJ=150℃
95
mJ
VGE=±15V,
TJ=25℃
45
mJ
Eoff
Turn off Energy
Inductive Load
TJ=125℃
58
mJ
TJ=150℃
63
mJ
ISC
Short Circuit Current
tpsc≤10µs , VGE=15V
2200
A
TJ=150℃,VCC=800V
RthJC
Junction to Case Thermal Resistance （Per IGBT）
0.048
K /W
Package Outline
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Main Product:
Semiconductor Triac,
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Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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