YZPST-FZ600R17KE4

10 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

P/N:YZPST-FZ600R17KE4

1700V/600ASingle Switches

Features：

1700V600A,VCE(sat)(typ.)=3.0V

Ultrafast switching speed

Excellent short circuit ruggedness

62mm single module

General Applications：

Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive

heating, UPS and other high frequency applications

Absolute Maximum Ratings of IGBT

VCES	Collector to Emitter Voltage		1700	V
VGES	Continuous Gate to Emitter Voltage		±30	V
IC	Continuous Collector Current	TC = 25°C	1200	A
IC	Continuous Collector Current	TC = 100°C	600	A
ICM	Pulse Collector Current	TJ = 150°C	1200	A
PD	Maximum Power Dissipation (IGBT)	TC = 25°C, TJ = 150°C	2660	W
tsc	Short Circuit Withstand Time		> 10	µs
TJ	Maximum IGBT Junction Temperature		150	°C
TJOP	Maximum Operating Junction Temperature Range		-40 to +150	°C
Tstg	Storage Temperature Range		-40 to +125	°C

Absolute Maximum Ratings of Freewheeling Diode

VRRM	Repetitive Peak Reverse Voltage Preliminary Data		1700	V
IF	Diode Continuous Forward Current	TC = 25°C	1200	A
		TC = 100°C	600
IFM	Diode Maximum Forward Current		1200	A

Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)

Parameter		Test Conditions		Min	Typ	Max	Unit
BVCES	Collector to Emitter Breakdown Voltage	VGE = 0V, IC = 1mA		1700			V
ICES	Collector to Emitter Leakage Current	VGE = 0V,VCE = VCES				5	mA
IGES	Gate to Emitter Leakage Current	VGE = ±30V, VCE = 0V				400	nA
VGE(th)	Gate Threshold Voltage	IC = 1mA, VCE = VGE		4.5		5.7	V
VCE(sat)	Collector to Emitter Saturation Voltage (Module Level)	IC = 600A, VGE = 15V	TJ = 25°C		3.00	3.20	V
VCE(sat)	Collector to Emitter Saturation Voltage (Module Level)	IC = 600A, VGE = 15V	TJ = 125°C		3.60		V

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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