YZPST-S4A010120A TO-220-2 Schottky diode

8 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

P/N:YZPST-S4A010120A

Silicon Carbide Schottky Diode

Features

Zero Reverse Recovery Current

Zero Forward Recovery Voltage

Positive Temperature Coefficient on VF

Temperature-independent Switching

175°C Operating Junction Temperature

Benefits

Replace Bipolar with Unipolar Device

Reduction of Heat Sink Size

Parallel Devices Without Thermal Runaway

Essentially No Switching Losses

Applications

Switch Mode Power Supplies

Power Factor Correction

Motor drive, PV Inverter, Wind Power Station

Maximum Ratings

Symbol	Parameter	Value	Unit	Test Conditions	Note
vRRM	Repetitive Peak Reverse Voltage	1200	V	TC = 25C
vRSM	Surge Peak Reverse Voltage	1200	V	TC = 25C
vR	DC Blocking Voltage	1200	V	TC = 25C
IF	Forward Current	30 14 10	A	TC ≤ 25C TC ≤ 135C TC ≤ 150C
IFSM	Non-Repetitive Forward Surge Current	95	A	TC = 25C, tp = 8.3ms, Half Sine Wave
Ptot	Power Dissipation	150	W	TC = 25C	Fig.3
TC	Maximum Case Temperature	150	C
TJ , TSTG	Operating Junction and Storage Temperature	-55 to 175	C
	TO-220 Mounting Torque	1	Nm	M3 Screw

Electrical Characteristics

Symbol	Parameter	Typ.	Max.	Unit	Test Conditions	Note
VF	Forward Voltage	1.55 2.2	1.8 2.5	V	IF = 10A, TJ = 25C IF = 10A, TJ = 175C	Fig.1
IR	Reverse Current	2 10	20 200	µA	VR = 1200V, TJ = 25C VR = 1200V, TJ = 175C	Fig.2
C	Total Capacitance	650 49 40	/	pF	VR = 0V, TJ = 25C, f = 1MHz VR = 400V, TJ = 25C, f = 1MHz VR = 800V, TJ = 25C, f = 1MHz	Fig.5
C	Total Capacitive Charge	29	/	nC	VR = 800V, IF = 10A di/dt = 200A/µs, TJ = 25C	Fig.4

Package Dimensions

Package TO-220-2

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode , Silicon Transistor, Bridge Rectifier

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