SCR YZPST-40TPS12

3 year ago

20 0 

YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

SCR YZPST-40TPS12

Product features

Table glass passivation process,

The back (anode) electrode metal: Ti-Ni-Ag

The Positive (gate, anode ) electrode metal: AL

The main purposes

Alternating current switch,

AC DC power converter,

The control of electric heating

Motor speed control

Package

TO-247

MainFeature (Tj=25℃)

Symbol

Value

Unit

IT (RMS)

40

A

VDRM / VRRM

1200

V

IGT

≤35

mA

Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT (RMS)

RMS on-state current (180°conduction angle)

40

A

ITSM

Non repetitive surge peak on-state

Current (tp= 10ms)

460

A

IGM

Peak gate current(tp=20us)

4

A

PGM

Peak gate power

5

W

PG(AV)

Average gate power

1

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+ 150 -40--+ 125

℃

Thermai Resistances

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-247

0.95

℃/W

Electrical characteristicsTj=25℃ unless otherwise stated

Symbol

Test Conditions

Value

Unit

Min

Type

Max

IGT

VD= 12V, RL=33 Ω

----

-----

35

mA

VGT

VD= 12V, RL=33 Ω

-----

-----

1.5

V

VGD

VD=VDRM, RL=3.3KΩ, RGK= 1KΩ,Tj=125℃

0.2

-----

-----

V

H

IT=500mA

-----

-----

75

mA

L

IG= 1.2IGT

-----

-----

150

mA

dV/dt

VD=67%VDRM, GateOpen, Tj=110℃

1000

-----

-----

v/ μs

VTM

IT=80A,tp=380 μs

-----

-----

1.6

V

dI/dt

IG=2IGT

50

-----

-----

A/ μs

I2T

Tp= 10ms

-----

-----

1060

A2 S

IDRM

VD=VDRM

Tj=25℃

-----

-----

10

μA

Tj=125℃

-----

-----

4

mA

VRRM

VR=VRRM

Tj=25℃

-----

-----

10

μA

Tj=125℃

-----

-----

4

mA

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

7 year

Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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Symbol	Parameter	Value	Unit
IT (RMS)	RMS on-state current (180°conduction angle)	40	A
ITSM	Non repetitive surge peak on-state Current (tp= 10ms)	460	A
IGM	Peak gate current(tp=20us)	4	A
PGM	Peak gate power	5	W
PG(AV)	Average gate power	1	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+ 150 -40--+ 125	℃

Symbol	Test Conditions		Value			Unit
Symbol	Test Conditions		Min	Type	Max	Unit
IGT	VD= 12V, RL=33 Ω		----	-----	35	mA
VGT	VD= 12V, RL=33 Ω		-----	-----	1.5	V
VGD	VD=VDRM, RL=3.3KΩ, RGK= 1KΩ,Tj=125℃		0.2	-----	-----	V
H	IT=500mA		-----	-----	75	mA
L	IG= 1.2IGT		-----	-----	150	mA
dV/dt	VD=67%VDRM, GateOpen, Tj=110℃		1000	-----	-----	v/ μs
VTM	IT=80A,tp=380 μs		-----	-----	1.6	V
dI/dt	IG=2IGT		50	-----	-----	A/ μs
I2T	Tp= 10ms		-----	-----	1060	A2 S
IDRM	VD=VDRM	Tj=25℃	-----	-----	10	μA
IDRM	VD=VDRM	Tj=125℃	-----	-----	4	mA
VRRM	VR=VRRM	Tj=25℃	-----	-----	10	μA
VRRM	VR=VRRM	Tj=125℃	-----	-----	4	mA