Phase Control Thyristor YZPST-KS150-1800V

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

I_TRMS

RMS value of on-state current

150

A

Nominal value

I_TSM

Peak one cycle surge

(non repetitive) current

2000

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

I square t

16

KA²s

8.3 msec and 10.0 msec

I_L

Latching current

-

mA

V_D = 24 V; R_L= 12 ohms

I_H

Holding current

-

mA

V_{D =} 24 V; I = 2.5 A

V_TM

Peak on-state voltage

1.65

V

I_TM = 450 A; T_j = 25 ^oC

di/dt

Critical rate of rise

of on-state current

non-repetitive

-

A/ms

Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM

repetitive

10

BLOCKING

V_DRM

V_RRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1800

V

V_DSM

V_RSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1900

V

I_DRM

I_RRM

Repetitive peak off state current Repetitive peak reverse  current

25

mA

T_j = 100 ^oC ,V_RRM V_DRM applied

dV/dt

Critical rate of voltage rise

300

V/ms

T_J=T_Jmax, linear to 80% rated V_DRM

TRIGGEING

P_G(AV)

Average gate power dissipation

4

W

P_GM

Peak gate power dissipation

15

W

I_GM

Peak gate current

-

A

I_GT

Gate trigger current

150

mA

T_C = 25 ^oC

V_GT

Gate trigger voltage

3.0

V

T_C = 25 ^oC

V_GD

Gate non-trigger voltage

-

V

T_j = 125 ^oC

SWITCHING

t_q

Turn-off time

-

ms

I_TM=550A, T_J=T_Jmax, di/dt=40A/μs,

V_R=50V, dv/dt=20V/μs, Gate 0V 100Ω, t_p=500μs

t_d

Delay time

-

Gate current A, di/dt=40A/μs,

V_d=0.67%V_DRM, T_J=25 ^oC

Q_rr

Reverse recovery charge

-

Symbol

Parameter

Values

Units

Test Conditions

T_j

Operating temperature

-40~125

^oC

T_stg

Storage temperature

-40~150

^oC

R _{th (j-c)}

Thermal resistance - junction to case

0.13

^oC/W

DC operation ，Single sided cooled

R _{th (c-s)}

Thermal resistance - case to sink

0.075

^oC/W

Single sided cooled

P

Mounting force

31

Nm

± 10 %

W

Weight

-

g

about