YZPST-FF600R17ME4

6 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

P/N:YZPST-600B170E53 (YZPST-FF600R17ME4)

Applications

Inverter for motor drive

AC and DC servo drive amplifier

UPS (Uninterruptible Power Supplies)

Features

Low Vce(sat) with SPT+ IGBT technology

Vce(sat) with positive temperature coefficient

Including fast & soft recovery anti-parallel FWD

High short circuit capability(10us)

Low inductance module structure

Maximum junction temperature 175℃

Absolute Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25℃	1700	V
Continuous Collector Current	IC	Tc=100℃	600	A
Peak Collector Current	ICRM	ICRM =2IC	1200	A
Gate-Emitter Voltage	VGES	Tvj=25℃	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25℃ Tvjmax=175℃	4286	W

IGBT Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate-emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =24mA,Tvj=25℃	5.4	6.2	7.4	V
Collector-Emitter Cut-off Current	ICES	VCE=1700V,VGE=0V, Tvj=25℃			1	mA
		Ic=600A,VGE=15V, Tvj=25℃		2.4	2.75	V
		Ic=600A,VGE=15V, Tvj=125℃		2.8		V
Collector-Emitter Saturation Voltage	VCE(sat)	Ic=600A,VGE=15V, Tvj=150℃		2.9		V
Input Capacitance	Cies			40		nF
Output Capacitance	Coes			2.09		nF
Reverse Transfer Capacitance	Cres	VCE=25V,VGE =0V, f=1MHz, Tvj=25℃		1.44		nF
Turn-on Delay Time	td(on)			180		ns
Rise Time	tr			100		ns
Turn-off Delay Time	td(off)			300		ns
Fall Time	tf	IC =600 A		100		ns
Energy Dissipation During Turn-on Time	Eon	VCE = 900 V VGE = ±15V RG = 1.0Ω Tvj=25℃		150		mJ
Energy Dissipation During Turn-off Time	Eoff			100		mJ
Turn-on Delay Time	td(on)			190		ns
Rise Time	tr			110		ns
Turn-off Delay Time	td(off)			350		ns
Fall Time	tf	IC =600 A		150		ns
Energy Dissipation During Turn-on Time	Eon	VCE = 900 V VGE = ±15V RG = 1.0Ω Tvj=125℃		225		mJ
Energy Dissipation During Turn-off Time	Eoff			160		mJ

Package Dimensions

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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