Direct Bonded Copper DBC Metallization of AlN Ceramic Substrate
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Direct Bonded Copper Substrate for Thick Film Circuits
The following are some common performance parameters of Ceramic Copper-clad Copper DBC Substrate for Thick Film circuits:
Electrical Properties
Dielectric Withstand Voltage: It can generally withstand relatively high voltages. For example, the insulation voltage is > 2.5KV, which can effectively isolate different conductive parts and prevent leakage and short circuits.
Surface Resistance: The copper layer on the surface has a relatively low resistance, usually in the range from micro-ohms to milli-ohms, ensuring efficient transmission of electrical signals and reducing signal attenuation.
Dielectric Constant: The dielectric constant of the ceramic substrate part is generally around 9, such as 9.4 (at 25 °C/1MHz), which has an important impact on the transmission speed and stability of signals in high-frequency circuits.
Dielectric Loss Tangent: It is usually required to be relatively low, such as ≤ 3×10⁻⁴ (at 25 °C/1MHz), to reduce energy loss at high frequencies.
Thermal Properties
Thermal Conductivity: The thermal conductivity of the ceramic part, like aluminum nitride, can reach about 170 W/(m·K), and that of the copper layer is approximately 385 W/(m·K). The overall substrate has good thermal conductivity and can quickly conduct heat away to achieve efficient heat dissipation.
Coefficient of Thermal Expansion: It is close to that of silicon chips, generally around 7 ppm/K, such as 7.1 ppm/K or 7.4 ppm/K. When the temperature changes, it can reduce thermal stress and prevent damage caused by the mismatch of thermal expansion between chips and the substrate.
Mechanical Properties
Peel Strength: The bonding force between the copper layer and the ceramic substrate is relatively strong, and the peel strength is generally ≥ 5.0 N/mm, ensuring that the copper layer will not easily peel off from the ceramic substrate during use.
Bending Strength: It has relatively high bending strength, can withstand certain mechanical external forces and vibrations, and is not prone to deformation and fracture.
Hardness: The ceramic substrate endows the substrate with relatively high hardness, giving it good wear resistance and scratch resistance.
Chemical Stability
Corrosion Resistance: Both the ceramic and the copper layer have good corrosion resistance and can remain stable in different chemical environments and atmospheres, and are not easily eroded by chemical substances such as oxidation, acids and alkalis.
Moisture Resistance: In a humid environment, the performance of the substrate will not decline significantly due to moisture absorption, and it has good moisture-proof performance.
Direct Bonded Copper DBC Metallization Substrate Performance Table
Solderability
Welding Wettability: The surface of the copper layer has good welding wettability, generally ≥ 95 (Sn/0.7Cu), which is easy for welding operations and can achieve reliable electrical connections with other electronic components.
Multiple Welding Performance: It can withstand the thermal impact during multiple welding processes and still maintain good performance after multiple weldings at 260 °C.
Dimensional Accuracy
Thickness Tolerance: The thickness tolerances of the ceramic substrate and the copper layer can be controlled within a relatively small range. For example, the standard thickness of the copper foil is 0.3 ± 0.015 mm to meet the requirements of different circuit designs.
Flatness: It has good flatness, and generally the maximum curvature is ≤ 150 μm/50 mm, ensuring good fitting with other components during installation and use.
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Alumina Ceramic Substrates,
Aluminum Nitride Substrates,
Metallized Ceramics,
AlN Ceramics Disc,
DPC Substrate ,
DBC Ceramic Substrate
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